Conductive channel pseudo block process and circuit to inhibit reverse engineering

ABSTRACT

A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is a divisional application of U.S. applicationSer. No. 10/635,790, filed on Aug. 5, 2003, now U.S. Pat. No. 7,049,667,which application claims the benefit of U.S. Provisional Application No.60/414,216 filed Sep. 27, 2002, the disclosure of which is incorporatedherein by reference.

TECHNICAL FIELD

The present invention relates to integrated circuits (ICs) andsemiconductor devices in general and their methods of manufacturewherein the integrated circuits and semiconductor devices employcamouflaging techniques which make it difficult for the reverse engineerto discern how the semiconductor device functions.

RELATED ART

The present invention is related to the following US patents by some ofthe same inventors as the present inventors:

-   -   (1) U.S. Pat. Nos. 5,866,933; 5,783,375 and 6,294,816 teach how        transistors in a CMOS circuit are connected by implanted (and        therefore hidden and buried) lines between the transistors by        modifying the p+ and n+ source/drain masks. These implanted        interconnections are used to make 3-input AND or OR circuits        look substantially identical to the reverse engineer. Also,        buried interconnects force the reverse engineer to examine the        IC in greater depth to try to figure out the connectivity        between transistors and hence their function.    -   (2) U.S. Pat. Nos. 5,783,846; 5,930,663 and 6,064,110 teach a        further modification in the source/drain implant masks so that        the implanted connecting lines between transistors have a gap        inserted, with approximately the length of the minimum feature        size of the CMOS technology being used. If this gap is “filled”        with one kind of implant, the line conducts; but if it is        “filled” with another kind of implant, the line does not        conduct. The intentional gaps are called “channel blocks.” The        reverse engineer is forced to determine connectivity on the        basis of resolving the implant type at the minimum feature size        of the CMOS process being used.    -   (3) U.S. Pat. No. 6,117,762 teaches a method and apparatus for        protecting semiconductor integrated circuits from reverse        engineering. Semiconductor active areas are formed on a        substrate and a silicide layer is formed both over at least one        active area of the semiconductor active areas and over a        selected substrate area for interconnecting the at least one        active area with another area through the silicide area formed        on the selected substrate area.

BACKGROUND OF THE INVENTION

The creation of complex integrated circuits and semiconductor devicescan be a very expensive undertaking given the large number of hours ofsophisticated engineering talent involved in designing such devices.Additionally, integrated circuits can include read only memories and/orEEPROMS into which software, in the form of firmware, is encoded.Further, integrated circuits are often used in applications involvingthe encryption of information, therefore, in order to keep suchinformation confidential, it can be desirable to keep such devices frombeing reverse engineered. Thus, there can be a variety of reasons forprotecting integrated circuits and other semiconductor devices frombeing reversed engineered.

In order to keep the reverse engineer at bay, different techniques areknown in the art to make integrated circuits more difficult to reverseengineer. One technique is to make the connections between transistorsdifficult to determine forcing the reverse engineer to carefully analyzeeach transistor (in particular, each CMOS transistor pair for CMOSdevices), and thwarting attempts to use automatic circuit and patternrecognition techniques in order to reverse engineer an integratedcircuit. Since integrated circuits can have hundreds of thousands oreven millions of transistors, forcing the reverse engineer to carefullyanalyze each transistor in a device can effectively frustrate thereverse engineer's ability to reverse engineer the device successfully.

A conductive layer, such as silicide, is often used during themanufacturing of semiconductor devices. In modem CMOS devices,especially with feature sizes below 0.5 μm, a silicide layer is utilizedto improve the conductivity of gate, source and drain contacts. Inaccordance with general design rules, any implant region using asource/drain implant is silicided.

One common reverse engineering technique involves de-layering thecompleted IC by means of chemical mechanical polishing (CMP). The CMPprocess may, under some conditions, reveal the regions between where thesilicide was formed and where it was not, i.e., the regions defined bythe silicide block mask step. These regions may be revealed because,under some kinds of chemical etches, there is an observable differencein topology due to different etching rates for silicided areas versuspure silicon areas. The reverse engineer, by noting the silicided areasversus non-silicided areas, may make reasonable assumptions as to thefunction of the device. This information can then be stored into adatabase for automatic classification of other similar devices.

Some methods of protecting against reverse engineering may besusceptible to discovery under some reverse engineering techniques, suchas CMP. For example, FIGS. 1A and 1B depict artifacts after CMPprocessing of transistors made in accordance with U.S. Pat. Nos.5,783,846; 5,930,663; and 6,064,110. U.S. Pat. Nos. 5,783,846;5,930,663; and 6,064,110 disclose hiding the connection of doped circuitelements 26, 22 (i.e. source/drain areas) of like conductivity withelectrically conductive doped implants 23-25 in the substrate, as shownin FIG. 1A. The electrically conductive doped implants 23-25 in thesubstrate may be provided during the same processing step as thesource/drain regions and, as such, have the same doping levels and aresimilarly silicided. In addition, as shown in FIG. 1B, to furtherconfuse the reverse engineer, an electrically conductive doped implantis selectively doped with a different conductivity type, creating achannel block structure 27, which prevents the electrical connectionfrom one doped circuit element to another. In order to prevent theelectrical connection from one doped circuit element 26 to another 22via the silicide, the silicide block mask is modified. Instead ofallowing a silicide layer to occur over any implant region using asource/drain implant, the silicide block mask is modified to prevent asilicide layer over the channel block structure 27.

FIGS. 1A and 1B depict artifact edges 28 of the silicide by the brokenlines shown thereon. In FIG. 1A, the silicide is allowed to cover theall of the doped regions 22-26 because all of the doped regions 22-26are doped with like conductivity type dopants. In FIG. 1B, a silicideblock mask is used to prevent silicide from covering doped region 27. Areverse engineer, after a suitable stain/etch on the bare siliconsurface, may be able to view this area and detect the artifact edges 28of the silicide, which are produced at the interfaces of the silicidedversus non-silicided regions. For the structure depicted by FIG. 1B, thereverse engineer could possibly conclude that when the artifact edge 28is as shown, with an interruption 30 between the two depicted silicidedportions, that such an interruption 30 would denote that the underlyingconductive implants include a non-conductive channel block structure 27.This information could then be entered into a data base and automaticpattern recognition techniques could be used to recognize the patternwith the interruption 30 as being indicative of a non-conductive channelblock structure 27. Thus, the effectiveness of this circuit camouflagetechnique is diminished.

Therefore a need exists to provide a semiconductor device and a methodof manufacturing semiconductor devices that uses artifact edges toconfuse the reverse engineer. Providing artifact edges that are notindicative of the actual device formed will further confuse the reverseengineer and result in incorrect conclusions as to the actualcomposition, and thus function, of the device.

SUMMARY OF THE INVENTION

It is an object of this invention to make reverse engineering even moredifficult and, in particular, to confuse the reverse engineer's study ofthe artifacts revealed during the reverse engineering process byproviding artifacts that are not indicative of the same underlyingprocessing and circuit features so that the reverse engineer is givenreason to doubt the validity of typical conclusions. It is believed thatthis will make the reverse engineer's efforts all the more difficult interms of making it very time consuming in order to reverse engineer achip employing the present invention and perhaps making it exceedinglyimpractical, if not impossible, to reverse engineer a chip employing thepresent invention. By confusing the reverse engineer's study of theartifacts, the reverse engineer is forced to examine every implantedchannel making the reverse engineer's job extremely time consuming.

An important aspect of the present invention is that it does not relyupon modifications or additions to the function of the circuitry that isto be protected from reverse engineering, nor does it require anyadditional processing steps or equipment. Instead, a highly effectivedeterrent to reverse engineering is accomplished in a streamlined mannerthat adds neither processing time nor complexity to the basic circuitry.

The Inventors named herein have previously filed Patent Applications andhave received Patents in this general area of technology, that is,relating to the camouflage of integrated circuit devices in order tomake it more difficult to reverse engineer them. The present inventioncan be used harmoniously with the techniques disclosed above in theprior United States Patents to further confuse the reverse engineer.

Note that the present invention might only be used on one in a thousandinstances on the chip in question, but the reverse engineer will have tolook very carefully at each transistor or connection knowing full wellthat for each transistor or connection that he or she sees, there is avery low likelihood that it has been modified by the present invention.The reverse engineer will be faced with having to find the proverbialneedle in a haystack. The present invention may also be used numeroustimes, i.e. with every CMOS pair, thus the reverse engineer is forced tostudy each channel, thereby making reverse engineering very impractical.

Briefly, and in general terms, the present invention comprises asemiconductor device and a method of manufacturing a semiconductordevice in which a conductive layer block mask is modified resulting inreverse engineering artifacts that are misleading and not indicative ofthe true structure of the device.

In another aspect, the present invention provides for camouflaging anintegrated circuit structure. The integrated circuit structure is formedby a plurality of layers of material having controlled outlines. A layerof silicide is disposed among said plurality of layers with a controlledoutline. The layer of silicide being used to confuse the reverseengineer into believing the semiconductor has one structure, when infact it has another structure.

DESCRIPTION OF THE DRAWINGS

FIG. 1A depicts prior art artifact edges of a silicide layer the reverseengineer will see after all the metal and oxide layers have been removedfrom a conductive channel;

FIG. 1B depicts prior art artifact edges of a silicide layer the reverseengineer will see after all the metal and oxide layers have been removedfrom a conductive channel which includes a channel block; and

FIG. 2 depicts artifact edges of a silicide layer the reverse engineerwill see after all the metal and oxide layers have been removed inaccordance with one embodiment of the present invention.

FIG. 3 shows a single integrated circuit device that includes conductingand non-conducting channels of the types shown in FIGS. 1A, 1B and 2 inaccordance with the present invention.

DETAILED DESCRIPTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which a preferred embodimentof the invention is shown. This invention may be embodied in manydifferent forms and should not be construed as limited to theembodiments set forth herein.

There are many methods of manufacturing of semiconductor deviceswell-known in the art. The following discussion does not include detailsregarding the manufacturing of semiconductor devices. Rather, thediscussion focuses on modifying a conductive layer block mask usedduring the manufacturing of semiconductor devices in order to furtherconfuse a reverse engineer.

The present invention makes use of an artifact edge of a silicide layerthat a reverse engineer might see when reverse engineering devicesmanufactured with other reverse engineering detection preventiontechniques.

In a reverse engineering detection prevention technique, describedabove, channel block structures are used to confuse the reverseengineer. As shown in FIG. 1B, the channel block structure 27 has adifferent dopant type than the channel areas 23, 25 and has aninterruption 30 in the overlying silicide. After using a reverseengineering process, such as CMP, the artifact edges 28 of a silicidelayer may reveal to the reverse engineer that a channel block structure24, 27 has been used to interrupt the electrical connection between twochannel areas 23, 25, as can be seen from comparing FIGS. 1A and 1B. Thetype of dopant used in the channel areas and the channel block structureis not readily available to the reverse engineer during most reverseengineering processes. Thus, the reverse engineer is forced to rely uponother methods, such as the artifact edges 28 of a silicide layer, todetermine if the conductive channel has a channel block in it.

FIG. 2 depicts artifact edges 28 of a silicide layer of a devicemanufactured in accordance with the present invention. A silicide blockmask is preferably modified to prevent a silicide layer from completelycovering a pseudo channel block structure 29. Channel block structure 29is of the same conductivity type as channel areas 23, 25; therefore, thepresence or absence of a silicide layer connecting the channel areas 23,25 does not have an impact on the electrical conductivity through thechannel. However, by modifying the silicide block mask to prevent asilicide layer from completely covering the pseudo channel blockstructure 29, the artifact edge 28 with interruption 30 appears to thereverse engineer to indicate that the channel is not electricallyconnected, i.e. the artifact edges 28 of FIG. 2 are identical to theartifact edges 28 of FIG. 1B. Thus, the reverse engineer, when viewingthe artifact edge 28, would leap to an incorrect assumption as to theconnectivity of the underlying channel.

In order to further camouflage the circuit, the dopant type used inchannel block structure 29 may be created at the same time Lightly DopedDrains (LDD) are created. Thus, even using stain and etch processes, thereverse engineer will have a much more difficult time discerning thedifference between the two types of implants, N-type versus P-type,vis-a-vis the much higher dose of the source/drain implants 22, 26.Further, by creating the pseudo channel block structure 29 with the LDDprocesses, the channel block structure 29 can be made smaller indimensions because of breakdown considerations.

In the preferred method of manufacturing the present invention, thedesign rules of a semiconductor chip manufacturer are modified to allowimplanted regions that are not silicided. In addition, the design rulesmay also be modified to allow for channel block structure 29 to be smalland lightly doped (through the use of LDD implants) to further preventdetection by the reverse engineer.

In modifying the design rules, it is important to ensure that theartifact edges of an actual conducting channel, as shown in FIG. 2,match the placement of the artifact edges of a non-conducting channel,as shown in FIG. 1B. For illustration purposes, the artifact edges 28 inFIG. 1B match the artifact edges 28 of FIG. 2. As one skilled in the artwill appreciate, the artifact edges 28 do not have to be located asspecifically shown in FIG. 1B or 2. Instead, the artifact edges mayappear almost anywhere along the channel. However, it is important that(1) the silicide layer does not provide an electrical connection (i.e.that the silicide layer does not completely cover channels with anintentional block or a pseudo block therein), and (2) that the artifactedges 28 for an electrical connection (i.e. a true connection) arerelatively the same as the artifact edges 28 for a non-electricalconnection (i.e. a false connection). As such, while it may be advisableto include conducting and non-conducting channels of the types shown inFIGS. 1A, 1B and 2 all on a single integrated circuit device 40, asshown in FIG. 3, it is the use of a mixture of channels of the typesshown and described with reference to FIGS. 1B and 2 that will keep thereverse engineer at bay.

In one embodiment, a method of making reverse engineering difficultcomprises the steps of: forming an electrically conductive doped channelbetween at least two active regions; disposing a first conductive layerover a first portion of the electrically conductive doped channel; anddisposing a second conductive layer over a second portion of theelectrically conductive doped channel wherein the first conductive layerand the second conductive layer are spaced apart from one another. Thestep of forming an electrically conductive doped channel furthercomprises the step of creating a channel block structure within theelectrically doped conductive channel, wherein the channel blockstructure, the electrically conductive doped channel and the at leasttwo active regions are of the same conductivity type. The channel blockstructure may be created using a smaller dopant concentration than adopant concentration used to create the at least two active regions andthe first and second conductive layers may be silicide layers.

In another embodiment, a method of protecting an integrated circuitdesign comprises the steps of: defining edges of a conductive layer fora non-conducting channel; and placing edges of a conductive layer for aconducting channel in the same relative location as the edges of theconductive layer for the non-conducting channel. The conductive layermay be silicide.

One skilled in the art will appreciate that while FIGS. 1A, 1B and 2 useN-type doped areas 22-25, 29 with a P-type channel block structure 27the above holds true for P-type doped areas with a N-type channel blockstructure.

Additionally, the invention is preferably used not to completely disablea multiple transistor circuit in which this invention is used, butrather to cause the circuit to function in an unexpected ornon-intuitive manner. For example, what appears to be an OR gate to thereverse might really function as an AND gate. Or what appears as aninverting input might really be non-inverting. The possibilities arepractically endless and are almost sure to cause the reverse engineer somuch grief that he or she will give up as opposed to pressing forward todiscover how to reverse engineer the integrated circuit device on whichthese techniques are utilized.

Finally, the disclosed method and apparatus is compatible with othercamouflaging techniques which may be used to protect integrated circuitdevices from being reverse engineered. Thus, this may be one of manytechniques used with a given integrated circuit device to protect itfrom being successfully reverse engineered.

Having described the invention in connection with certain preferredembodiments thereof, modification will now certainly suggest itself tothose skilled in the art. As such, the invention is not to be limited tothe disclosed embodiments, except as is specifically required by theappended claims.

1. A method of making a semiconductor to make reverse engineeringdifficult comprising: forming on the semiconductor a first electricallyconductive doped channel having a first doping type between at least twofirst active regions having the first doping type; forming a mask layerover a region between a first portion of said first electricallyconductive doped channel and a second portion of said first electricallyconductive doped channel; disposing a first conductive layer over thefirst portion of said first electrically conductive doped channel;disposing a second conductive layer over the second portion of saidfirst electrically conductive doped channel wherein said firstconductive layer and said second conductive layer are spaced apart fromone another; forming on the semiconductor a second electricallyconductive doped channel having a second doping type between at leasttwo second active regions having the first doping type; forming the masklayer over a second region between a first portion of said secondelectrically conductive doped channel and a second portion of saidsecond electrically conductive doped channel; disposing a thirdconductive layer over the first portion of said second electricallyconductive doped channel; and disposing a fourth conductive layer overthe second portion of said second electrically conductive doped channelwherein said third conductive layer and said fourth conductive layer arespaced apart from one another; wherein edges of the first and secondconductive layers are in a same relative location as edges of the thirdand fourth conductive layers.
 2. The method of claim 1 wherein saidfirst electrically conductive doped channel is created using a smallerdopant concentration than a dopant concentration used to create said atleast two active regions.
 3. The method of claim 1 wherein said firstand second conductive layers are silicide layers.
 4. A method of makinga semiconductor for protecting an integrated circuit design comprising:forming on the semiconductor first boundary edges of a first conductivelayer by using a mask layer in first positions relative to a channelblock having a first doping type to prevent the first conductive layerfrom forming an electrically conductive path over the channel block; andforming on the semiconductor second boundary edges of a secondconductive layer by using the mask layer in second positions relative toa conducting channel having a second doping type, the second positionsrelative to the conducting channel being substantially similar to thefirst positions relative to the channel block.
 5. The method of claim 4wherein said first conductive layer and said second conductive layercomprise silicide.
 6. A method of making a semiconductor for protectingan integrated circuit design comprising: forming on the semiconductoredges of a first conductive layer associated with a non-conductingchannel-blocked channel by using a mask layer; and forming on thesemiconductor edges of a second conductive layer associated with apseudo channel-blocked conducting channel in the same disposition assaid edges of said first conductive layer for said non-conductingchannel-blocked channel by using the mask layer.
 7. The method of claim6 wherein said first and second conductive layers comprise silicide. 8.The method of claim 1 further comprising: forming a third electricallyconductive doped channel having the first doping type between at leasttwo third active regions having the first doping type; and disposing afifth conductive layer over the third electrically conductive dopedchannel.
 9. The method of claim 8 wherein said first, second, third,fourth, and fifth conductive layers comprise silicide.
 10. The method ofclaim 1 wherein said first doping type comprises n-type doping and thesecond doping type comprises p-type doping.
 11. The method of claim 1wherein said first doping type comprises p-type doping and the seconddoping type comprises n-type doping.
 12. The method of claim 1 whereinpositions of the first conductive layer and the second conductive layerrelative to the first electrically conductive doped channel aresubstantially similar to positions of the third conductive layer and thefourth conductive layer relative to the second electrically conductivedoped channel.
 13. The method of claim 1 wherein the mask is a silicideblock mask.
 14. The method of claim 1 further comprising creating thefirst doping type used in the first electrically conductive dopedchannel at a same time as creating a plurality of Lightly Doped Drains(LDDs).
 15. The method of claim 4 further comprising creating the firstdopant type used in the conducting channel at a same time as creating aplurality of Lightly Doped Drains (LDDs).
 16. The method of claim 6further comprising creating a first dopant type used in the pseudochannel blocked conducting channel at a same time as creating aplurality of Lightly Doped Drains (LDDs).